dcr1110f52 phase control thyristor preliminary information ds5965 - 1 august 2010 (ln27372) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr1110f5 2 * dcr1110f5 0 5 2 00 5 0 00 t vj = - 40c to 125c, i drm = i rrm = 100ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. *5000v @ - 40 o c, 5200v @ 0 o c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr1110f5 2 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 5 2 00v i t(av) 1107 a i tsm 14 800 a dv/dt* 1500v/s di/dt 8 00a/s * higher dv/dt selections available outline type code: f (see package details for further information) fig. 1 package outline
semiconductor dcr1110f52 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 1107 a i t(rms) rms value - 1 739 a i t continuous (direct) on - state current - 1 684 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 14 .8 ka i 2 t i 2 t for fusing v r = 0 1. 097 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0184 c/w single side cooled anode dc - 0.0333 c/w cathode dc - 0.0418 c/w r th(c - h) thermal resistance C case to heatsink clamping force 23kn double side - 0.004 c/w (with mounting compound) single side - 0.008 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 20 .0 25.0 kn
semiconductor dcr1110f52 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 100 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 20 0 a/s gate source 30v, 10 ? , non - repetitive - 8 00 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 3 00a to 7 5 0a at t case = 125c - 0. 948 v threshold voltage C high level 7 5 0a to 4000a at t case = 125c - 1.0 78 v r t on - state slope resistance C low level 3 00a to 7 5 0a at t case = 125c - 0. 783 m ? on - state slope resistance C high level 7 5 0a to 4000a at t case = 125c - 0. 610 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 100v, di/dt = 5a/s, - 10 00 s dv dr /dt = 20v/s linear to 20 00v q s stored charge i t = 1000a, tp = 1000us,t j = 125c, di/dt =5a/s, 22 00 38 00 c i rr reverse recovery current 90 115 a i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr1110f52 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 250 ma i gd gate non - trigger current at 50% v drm, t case = 125c 10 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = - 0.069834 b = 0.220863 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000 638 d = - 0.013352 these values are valid for t j = 125c for i t 3 00a to 4000a 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0.5 1.5 2.5 3.5 4.5 instantaneous on - state current, i t - (a) instantaneous on - state voltage, v t - (v) min 25 c max 25 c min 125 c max 125 c
semiconductor dcr1110f52 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 2 4 6 8 10 12 14 16 0 1000 2000 3000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 250 500 750 1000 1250 1500 1750 maximum case temperature, t case ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 25 50 75 100 125 0 500 1000 1500 maximum heatsink temperature, t heatsink - ( c) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 2 4 6 8 10 12 0 1000 2000 3000 4000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor dcr1110f52 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 0.001 0.01 0.1 1 10 100 thermal impedance z th(j - c) ( c/kw ) time ( s ) double side cooled cathode side cooled anode side cooled 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 maximum permissible case temperature , t case - ( c) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 maximum permissible case temperature , tcase - ( c) mean on - state current, it(av) - (a) d.c. 180 120 90 60 30 1 2 3 4 double side cooled r i (c/kw) 7.5608 4.0772 3.8420 2.8671 t i (s) 0.6877 0.2537 0.0614 0.0101 anode side cooled r i (c/kw) 6.7211 4.6219 15.5387 14.8631 t i (s) 0.1910 0.0158 5.0011 3.3169 cathode side cooled r i (c/kw) 11.5564 8.5810 4.7942 8.3643 t i (s) 4.2216 6.0269 0.0166 0.2255 )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 3.19 2.14 180 2.97 2.03 180 2.95 2.02 120 3.72 3.10 120 3.43 2.89 120 3.40 2.87 90 4.29 3.64 90 3.92 3.36 90 3.88 3.34 60 4.81 4.23 60 4.36 3.87 60 4.31 3.84 30 5.22 4.88 30 4.69 4.41 30 4.64 4.37 15 5.40 5.22 15 4.84 4.70 15 4.79 4.65
semiconductor dcr1110f52 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge vs di/dt fig.13 reverse recovery current vs di/dt 1 10 100 1 10 100 surge current, i tsm - (ka) number of cycles conditions: tcase = 125 c v r =0 pulse width = 10ms 0 1 2 3 0 5 10 15 20 25 30 35 40 1 10 100 i 2 t (ma 2 s) surge current, i tsm - (ka) pulse width, t p - (ms) i 2 t i tsm conditions: t case = 125 c v r = 0 half - sine wave 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 stored charge, q s - (uc) rate of decay of on - state current, di/dt - (a/us) q smax = 2281.45*(di/dt) 0.317 q smin = 1115.64*(di/dt) 0.4219 conditions: t j = 125 c t p = 1ms v r = 100v 0 50 100 150 200 250 300 0 5 10 15 20 25 reverse recovery current, i rr - (a/us) rate of decay of on - state current, di/dt - (a/us) i rrmax = 42.61*(di/dt) 0.6113 i rrmin = 30.51*(di/dt) 0.675 conditions: t j = 125oc t p = 1ms v r = 100v
semiconductor dcr1110f52 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) tj = 125 o c tj = 25 o c tj = - 40 o c preferred gate drive area upper limit lower limit 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts)
semiconductor dcr1110f52 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: f fig.16 package outline device maximum thickness (mm) minimum thickness (mm) dcr1003sf18 26.415 25.865 dcr1006sf28 26.49 25.94 dcr1008sf36 26.72 26.17 dcr1020f65 27.1 26.55 dcr1050sf42 26.72 26.17 dcr1110f52 26.84 26.29 dcr1180f52 26.84 26.29 dcr1260f42 26.72 26.17 dcr1274sf18 26.415 25.865 dcr1275sf28 26.49 25.94 dcr1277sf36 26.72 26.17 dcr1279sf48 26.84 26.29 dcr1350f42 26.72 26.17 dcr1610f28 26.49 25.94 dcr1640f28 26.49 25.94 dcr1770f22 26.415 25.865 dcr1830f22 26.415 25.865 dcr750f85 27.46 26.91 dcr810f85 27.46 26.91 dcr840f48 26.84 26.29 dcr890f65 27.1 26.5 dcr950f65 27.1 26.5 3rd angle projection if in doubt ask do not scale for package height see table gate anode cathode ?1.5 ?47.0 nom ?47.0 nom ?73.0 max electrodes) deep (in both hole ?3.60 x 2.00 20 offset (nom.) to gate tube
semiconductor dcr1110f52 10 / 10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are me t. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided with out any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not i ntended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunct ion. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any elect ric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside t he product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this m ay include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. approp riate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not ye t fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynex s conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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